Method for preparing IBC solar cell with N-type FSF structure based on photoetching mask method

The invention provides a method for preparing an IBC solar cell of an N-type FSF structure based on a photoetching mask method. A silicon wafer is sequentially subjected to a damage layer removing step, a selective emitter manufacturing step, a texturing step, a surface field manufacturing step, an antireflection film plating step, a silk-screen printing step and a sintering step. In the process of manufacturing the crossed P+ emitter and the N+ back field, a photoetching mask technology is adopted to prevent crystal lattice damage from being introduced into a silicon wafer near a windowing region, so that the carrier recombination rate is reduced. Meanwhile, the FSF structure on the front surface of the cell and the N-type silicon substrate form a high-low junction, minority carrier holesare promoted to be transported to the back surface of the cell, the holes in the area above the P+ emitter are directly collected, and the holes above the N+ back field move in parallel until the P+emitter is collected. 本专利提