ERROR CHARACTERISTIC ESTIMATION FOR NAND FLASH

Techniques related to improving a performance related to at least data reads from a memory are described. In an example, data is stored in a block of the memory as codewords. A data read includes a determination of whether each bit from a portion of the block is a zero or a one based on voltage measurements. Prior to decoding the codewords by performing a decoding procedure by an ECC decoder of the memory, a first number of errors E01 and a second number of errors E10 are estimated, where the first number of errors E01 is associated with bits each being a true zero and erroneously determined as a one, and where the second number of errors E10 associated with bits each being a true one and erroneously determined as a zero. Thereafter, the decoding of the codewords based on the decoding procedure is performed. 本申请涉及NAND闪存的错误特性估计并且描述了一种涉及提高至少与从存储器读取数据相关的性能的技术。在示例中，数据作为码字被存储在存储器的块中。数据读取包括基于电压测量值来确定块的一部分中的每个位是零还是一。在通过存储器的ECC解码器执行解码进程来对码字进行解码之前，估计第一数量的错误"E01"和第二数量的错误"E10"，其中第一数量的错误"E01"与每个为真零却被错误地确定为一的位相关联，并且其中第二数量