Thin-film resistor in integrated circuit and method of fabricating the same

A method of fabricating a thin film resistor (TFR) module includes forming a TFR element over a substrate; annealing the TFR element to reduce the temperature coefficient of resistance (TCR) of the TFR element; and after forming and annealing the TFR element, forming a pair of conductive TFR heads in contact with the TFR element. By forming the TFR element before the TFR heads, the TFR element maybe annealed without affecting the TFR heads, and thus may be formed from various materials with different annealing properties, e.g., SiCCr and SiCr. Thus, the TFR element may be annealed to achievea near 0 ppm TCR, without affecting the later-formed TFR heads. The TFR module may be formed using a damascene CMP approach and using only a single added mask layer. Further, vertically-extending "ridges" at edges of the TFR element may be removed or eliminated to further improve the TCR performance. 一种制造薄膜电阻器(TFR)模块的方法包括：在衬底上形成TFR元件；使所述TFR元件退火以减小所述TFR元件的电阻温度系数(TCR)；以及在形成该TFR元件并将其退火之后，形成与该TFR元件的相对侧接触的一对导电TFR头。通过在该TFR头之前形成该