Systems, devices, and methods for epitaxial growth on semiconductor structures

Systems, devices, and methods related to epitaxial growth on semiconductor structures are described. The device may include a working surface of a substrate material and a storage node connected to anactive area of an access device on the working surface. The device may also include a material epitaxially grown over the storage node contact to enclose a non-solid space between the storage node contact and passing sense lines. 本公开描述与在半导体结构上外延生长有关的系统、设备和方法。一种设备可包含衬底材料的工作表面，以及连接到所述工作表面上的存取装置的有源区域的存储节点。所述设备还可包含在所述存储节点触点上方外延地生长以围封所述存储节点触点与穿过感测线之间的非实心空间的材料。