Polycrystalline silicon production method and system
The invention provides a polycrystalline silicon production method which comprises the following steps: before a reaction starts, heating a silicon core in a reduction furnace to a first set temperature by utilizing microwaves, and then applying current after the silicon core is broken down so as to...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a polycrystalline silicon production method which comprises the following steps: before a reaction starts, heating a silicon core in a reduction furnace to a first set temperature by utilizing microwaves, and then applying current after the silicon core is broken down so as to chemically deposit polycrystalline silicon on the surface of the silicon core to obtain a silicon rod; and in the reaction process, if the silicon rod is powered off, heating the silicon rod to a second set temperature by utilizing microwaves after power failure and before restarting, and then applying current after the silicon rod is broken down, so as to continue chemical deposition of polycrystalline silicon on the surface of the silicon rod. The invention further provides a polycrystallinesilicon production system; the polycrystalline silicon production system comprises an energy feedback unit and a protection unit; the energy feedback unit comprises an energy feedback antenna, and theenergy feedback antenna i |
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