TRANSISTORS, ARRAYS OF TRANSISTORS, ARRAYS OF MEMORY CELLS INDIVIDUALLY COMPRISING A CAPACITOR AND AN ELEVATIONALLY-EXTENDING TRANSISTOR, AND METHODS OF FORMING AN ARRAY OF TRANSISTORS

A transistor comprises semiconductor material that is generally L-shaped or generally mirror L-shaped in at least one straight-line vertical cross-section thereby having an elevationally-extending stem and a base extending horizontally from a lateral side of the stem above a bottom of the stem. The semiconductor material of the stem comprises an upper source/drain region and a channel region there-below. The transistor comprises at least one of (a) and (b), where (a) : the semiconductor material of the stem comprises a lower source/drain region below the channel region, and (b) : the semiconductor material of the base comprises a lower source/drain region. A gate is operatively laterally adjacent the channel region of the stem. Other embodiments are disclosed, including arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor. Methods are disclosed. 本发明揭示一种晶体管，其包括在至少一个直线垂直横截面中是大体上L形或大体上镜像L形借此具有在竖向上延伸的杆及在所述杆的底部上方从所述杆的横向侧水平延伸的基底的半导体材料。所述杆的所述半导体材料包括上源极/漏极区域及在其下方的沟道区域。所