Semiconductor structure manufacturing method

The embodiment of the invention provides a semiconductor structure manufacturing method. A substrate structure is provided; the substrate structure comprises a first opening; the first opening depth is greater than a preset depth; a first dielectric layer with a first thickness is formed on the side...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AI YIMING, YANG YONGGANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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