Semiconductor structure manufacturing method

The embodiment of the invention provides a semiconductor structure manufacturing method. A substrate structure is provided; the substrate structure comprises a first opening; the first opening depth is greater than a preset depth; a first dielectric layer with a first thickness is formed on the side wall of the first opening; oxidation treatment is carried out on the first dielectric layer, and anoxide layer is formed on a part of the first dielectric layer; in the first opening, the distribution of the second gas is reduced along with the increase of the depth of the opening; the oxide layeris removed to obtain the first dielectric layer with a second thickness; and the second thickness is smaller than the first thickness. Thus, when a thin film is deposited in the opening with the large depth, the form of the deposited dielectric layer can be improved, and therefore the adverse effect on the electrical property of the semiconductor device due to the poor form of the dielectric layer is reduced. 本发明实施例提供了一种半