Flash memory programming operation method and operation circuit

The invention relates to the field of memories, in particular to a flash memory programming operation method and an operation circuit. The method comprises the steps: providing a pulse sequence signalto a bit line of a memory cell, wherein the pulse sequence signal includes a high level period and a low level period alternating in sequence in a time domain; under the control of the programming permission signal, enabling the storage unit to perform programming operation according to programming input data during a period of high level of the pulse sequence signal; enabling the storage unit toperform read detection operation during a low level period of the pulse sequence signal, wherein the read detection operation includes the operations: reading out data stored in a memory cell, and comparing whether the data read out during a low level period coincides with programming input data; if so, stopping the programming operation; otherwise, enabling the storage unit to perform programming operation again accordin