TAPE FOR ELECTRONIC COMPONENT AND METHOD OF PROCESSING ELECTRONIC COMPONENT

TAPE FOR ELECTRONIC COMPONENT AND METHOD OF PROCESSING ELECTRONIC COMPONENT

Provided are a tape for an electronic component and a method of processing an electronic component, which can sufficiently follow a semiconductor wafer having a bump with a large height and can prevent a dimple from occurring on the ground surface of the semiconductor wafer. The tape 1 for an electr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: OKURA MASATO
Format: Patent
Sprache:chi ; eng
Schlagworte:
ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
USE OF MATERIALS AS ADHESIVES
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Beschreibung
Zusammenfassung:Provided are a tape for an electronic component and a method of processing an electronic component, which can sufficiently follow a semiconductor wafer having a bump with a large height and can prevent a dimple from occurring on the ground surface of the semiconductor wafer. The tape 1 for an electronic component according to the present invention is characterized in that the tape 1 has at least one resin layer 3, the resin layer 3 has a storage modulus of 10,000 to 200,000 Pa at any temperature of 60 DEG C to 80 DEG C, and the melt flow rate is 10 g/10 min to 200 g/10 min. 提供即使对于具有高度大的凸块的半导体晶片亦可充分进行追随，并且可防止在半导体晶片磨削面产生凹痕的电子部件用胶带及电子部件的加工方法。基于本发明的电子部件用胶带(1)具有至少1层树脂层(3)，关于树脂层(3)，储能模量在60℃～80℃的任意温度条件下为10000～200000Pa，熔体流动速率为10～200g/10min。