Er-state threshold voltage distribution-based flash memory error erasure data recovery method

The invention discloses a Er-state threshold voltage distribution-based flash memory error erasure data recovery method, and relates to the technical field of solid-state storage. For a problem of a flash memory data loss caused by mistaken erasure operation of a user, there is no direct recovery method for mistaken erasure data at present. The invention provides a measured Er-state threshold voltage-based flash memory data recovery method for data recovery of error erasure of a flash memory. According to the method, in the actual use process, a theoretical basis and an implementation method are provided for data recovery of the error erasure flash memory by utilizing a mathematical relationship between the erased Er-state threshold voltage and the state of the flash memory cell before theflash memory cell is erased and combining a machine learning algorithm. The method is mainly used for recovering the flash memory error erasure data. 一种基于Er态阈值电压分布的闪存误擦除数据恢复方法，涉及固态存储技术领域。本发明是为了解决针对用户误擦除操作导致闪存数据丢失的问题，目前尚没有任何误