Preparation device and preparation process for electronic-grade silicon dioxide etching solution

The invention discloses a preparation device and a preparation process for an electronic-grade silicon dioxide etching solution, and relates to the technical field of light-sensitive chemistry. The preparation device comprises a first storage tank for storing a raw material hydrofluoric acid, a seco...

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Hauptverfasser: LIU YIFENG, CHEN SHAOJUN, LI WENBIN, LUO YANCHENG, REN JIANYE, CHEN ZHONGYOU, QIU JIANMING, ZHENG YIDA
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a preparation device and a preparation process for an electronic-grade silicon dioxide etching solution, and relates to the technical field of light-sensitive chemistry. The preparation device comprises a first storage tank for storing a raw material hydrofluoric acid, a second storage tank for storing a raw material ammonium fluoride, a third storage tank for storing a rawmaterial surfactant, a fourth storage tank for storing a raw material ultrapure water, a mixing tank and a precision filter. The first storage tank, the second storage tank, the third storage tank and the fourth storage tank are all selectively communicated with ae mixing tank, and an outlet of the mixing tank is communicated with an inlet of the precision filter. The structure is simple, the complexity is simplified, the production process is simplified, the operation difficulty is reduced, and the positive significance is achieved for improving the production efficiency. The preparation process is simple to operate