LOW TEMPERATURE MOLYBDENUM FILM DEPOSITON UTILIZING BORON NUCLEATION LAYERS

The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layerformed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enablesMo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film. 本公开涉及一种利用硼成核层和钼成核层制造钼膜的方法。与不使用硼成核层或钼成核层的常规化学气相沉积工艺相比，所得钼膜具有低电阻率、基本上不含硼、并且可以在降低的温度下制造。通过此工艺形成的所述钼成核层可以保护衬底免受MoCl5或MoOCl4的刻蚀作用，有利于随后CVD Mo生长在所述钼成核层顶上的成核，并使Mo CVD沉积能够在较低温度下进行。所述成核层也可用于控制随后CVD Mo生长的晶粒大小，并因此控制Mo膜的电阻率。