ALIGNMENT METHOD AND APPARATUS

A method of determining a position of a feature (for example an alignment mark) on an object (for example a silicon wafer) is disclosed. The method comprises the steps: determining an offset parameter, determining the second position; and determining a first position from the second position and the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GOORDEN SEBASTIANUS, HUISMAN SIMON R
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method of determining a position of a feature (for example an alignment mark) on an object (for example a silicon wafer) is disclosed. The method comprises the steps: determining an offset parameter, determining the second position; and determining a first position from the second position and the offset parameter, the position of the mark being the first position. The offset parameter is a measure of a difference in: a first position that is indicative of the position of the feature; and a second position that is indicative of the position of the feature. The offset parameter may be determined using a first measurement apparatus and the second position may be determined using a second, different measurement apparatus. 公开了一种确定特征(例如,对准标记)在对象(例如,硅晶片)上的位置的方法。所述方法包括:确定偏移参数;确定所述第二位置;以及根据所述第二位置和所述偏移参数确定第一位置,所述标记的位置是所述第一位置。所述偏移参数是以下各项的差的量度:指示所述特征的位置的第一位置;和指示所述特征的位置的第二位置;可以使用第一测量设备确定所述偏移参数并且可以使用不同的第二测量设备确定所述第二位置。