Crystal silicon wafer corrosion rate testing method
The invention provides a method for testing the corrosion rate of a crystalline silicon wafer, and belongs to the technical field of silicon wafer testing. The method comprises the following steps of:weighing a to-be-corroded silicon wafer, and recording the weight W1 of the silicon wafer before cor...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a method for testing the corrosion rate of a crystalline silicon wafer, and belongs to the technical field of silicon wafer testing. The method comprises the following steps of:weighing a to-be-corroded silicon wafer, and recording the weight W1 of the silicon wafer before corrosion; putting the silicon wafer on a rolling conveying device in a cleaning tank, and cleaning and corroding the silicon wafer; taking out the corroded silicon wafer, weighing, and recording the weight W2 of the corroded silicon wafer; calculating the corrosion depth of the silicon wafer; and calculating the silicon wafer corrosion rate of each test, and calculating the average value of the silicon wafer corrosion rates. The method for testing the corrosion rate of the crystalline silicon wafer is simple to operate, convenient and reliable, and not only improves the accuracy of test data, but also improves the working efficiency of testing.
本发明提供了一种晶体硅片腐蚀速率测试方法,属于硅片测试技术领域,包括将待腐蚀的硅片称重,记录硅片腐蚀前的重量W1;将硅片放到清洗槽内的滚动输送装置 |
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