FPGA-based online junction temperature calculation method for SiC power device

The invention belongs to the technical field of semiconductors and relates to an FPGA-based online junction temperature calculation method for a SiC power device. The calculation method comprises thefollowing steps of: 1) preprocessing a driving pulse signal, and outputting a reconstructed signal; 2...

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Bibliographische Detailangaben
Hauptverfasser: SHUI FULI, WANG LIANGLIANG, LIU ZHIMIN, WU XIAOWEI, YANG HUILAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention belongs to the technical field of semiconductors and relates to an FPGA-based online junction temperature calculation method for a SiC power device. The calculation method comprises thefollowing steps of: 1) preprocessing a driving pulse signal, and outputting a reconstructed signal; 2) carrying out zero drift removal processing on conduction current; 3) calculating the average power in a pulse conduction period; 4) carrying out delay signal reproduction; and 5) enabling power loss pulse flow to enter a junction temperature model to calculate the junction temperature of the power device. The method is applied to various application occasions of the SiC power device; the invention provides the processing method for calculating power consumption based on the driving signal, the online dynamic zero drift removing method based on probability statistics, the power loss pulse flow construction method, a discretization model in which the minimum unit thermal resistance R and thermal capacity C of a Fos