SUBSTRATE TREATMENT DEVICE

The present invention relates to a substrate treatment device comprising: a chamber; a first electrode disposed on the top of the chamber; a second electrode disposed on the bottom of the first electrode and including a plurality of openings; a plurality of protruding electrodes extending from the f...

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Bibliographische Detailangaben
Hauptverfasser:	CHO WON TAE, KIM YOUNG WOON, OH WOONG KYO, YOO KWANG SU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a substrate treatment device comprising: a chamber; a first electrode disposed on the top of the chamber; a second electrode disposed on the bottom of the first electrode and including a plurality of openings; a plurality of protruding electrodes extending from the first electrode and extending to the plurality of openings of the second electrode; a substrate support stand which faces the second electrode and on which a substrate is placed; a first discharge region between the bottom surface of the first electrode and the top surface of the second electrode; asecond discharge region between the side surface of the protruding electrode and the inner surface of the openings of the second electrode; a third discharge region between the bottom surface of the protruding electrode and the inner surface of the openings of the second electrode; and a fourth discharge region between the second electrode and the substrate, wherein plasma is generated in at leastone of the first discharg