Double perovskite thin film device with photodiode effect and preparation method and application thereof

The invention belongs to the technical field of microelectronics. The invention discloses a double perovskite thin film device with a photodiode effect and a preparation method and application thereof. The preparation method of the device comprises the following steps of: spin-coating LaNiO3 or La0. 7Sr0. 3MnO3 precursor solution on a silicon wafer; obtaining a gel wet film, and repeating spin coating, drying, pyrolysis and pre-annealing processes after pre-annealing; annealing at 750-800 DEG C, spin-coating a Bi2FeCrO6 precursor solution on the bottom electrode, wiping the gel wet film to expose part of the bottom electrode, repeating the spin-coating, drying, pyrolysis and pre-annealing processes after pre-annealing, annealing at 750-800 DEG C to prepare a Bi2FeCrO6 film, and plating a top electrode on the front surface of the Bi2FeCrO6 film to prepare the double perovskite thin film device; the structure of the thin film device is a top electrode/Bi2FeCrO6 thin film/bottom electrode/n-Si substrate. The dev