SEMICONDUCTOR DEVICE

A semiconductor device is described that includes a substrate, an active region protruding from the substrate and extending in a first direction, a plurality of channel layers disposed on the active region and spaced apart from each other in a direction perpendicular to an upper surface of the substrate, an isolation film disposed between a lowermost channel layer of the plurality of channel layers and the active region, a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction, and a source/drain region disposed on at least one side of the gate electrode and connected to each of the plurality of channel layers. The isolation film is disposed on a level higher than a bottom surface of the source/drain region. 描述了一种半导体器件，所述半导体器件包括：衬底；有源区，所述有源区从所述衬底突出并在第一方向上延伸；多个沟道层，所述多个沟道层设置在所述有源区上，并且在垂直于所述衬底的上表面的方向上彼此间隔开；隔离膜，所述隔离膜设置在所述多个沟道层中的最下面的沟道层与所述有源区之间；栅电极，所述栅电极围绕所述多个沟道层并在与所述第一方向相交的第二方向上延伸；和源极/漏极区，所述源极/漏极区设置在所述栅电极的至少一侧并连接到所述多个沟道层中的每个沟道层。所述隔离膜设置在比所述源极