MODIFYING FERROELECTRIC PROPERTIES OF HAFNIUM OXIDE WITH HAFNIUM NITRIDE LAYERS

A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a hafnium nitride (HfN) layer on the HfO2 layer; and annealing the HfO2 layer and the HfN layer to form ferroelectric hafnium HfO2. 一种在衬底处理系统中形成铁电氧化铪(H...

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Hauptverfasser:	YOON HYUNGSUK ALEXANDER, ZHU ZHONGWEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a hafnium nitride (HfN) layer on the HfO2 layer; and annealing the HfO2 layer and the HfN layer to form ferroelectric hafnium HfO2. 一种在衬底处理系统中形成铁电氧化铪(HfO2)的方法包括：在衬底上沉积HfO2层；在所述HfO2层上沉积氮化铪(HfN)层；以及使所述HfO2层和所述HfN层退火以形成铁电铪HfO2。