Super junction MOSFET

The invention belongs to the technical field of power semiconductors, and relates to a super-junction MOSFET. According to the super junction MOSFET device, a second conductive type semiconductor column with length gradient and concentration gradient is introduced in a drift region, rapid reduction of Cgd capacitance caused by transverse depletion and longitudinal expansion of adjacent voltage-withstanding columns is avoided by reducing the length of the voltage-withstanding columns close to the JFET region, so that a minimum point on a Cgd-Vds curve moves towards the direction of larger Vds,the Cgd capacitance value is increased when the Vds is smaller, and the Cgd-Vds curve is flatter. Therefore, switching time can be shortened, switching power consumption can be reduced, switching oscillation can be reduced, EMI can be relieved, and dynamic characteristics of the super-junction device can be improved. 本发明属于功率半导体技术领域，涉及一种超结MOSFET。本发明提供的一种超结MOSFET器件，在漂移区引入长度渐变，浓度渐变的第二导电类型半导体柱，通过减小靠近JFET区耐压柱的长度来避免相邻耐压柱横向耗尽，纵向