Hovenia tree rapid seedling cultivation method
The invention provides a hovenia tree rapid seedling culture method. The method comprises the following steps: S1, washing seeds in clear water before seedling culture, and soaking the seeds in clearwater at A temperature of 20 DEG C for 3-5 hours; S2, flatly laying 10-20 cm thick wet soil with neut...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a hovenia tree rapid seedling culture method. The method comprises the following steps: S1, washing seeds in clear water before seedling culture, and soaking the seeds in clearwater at A temperature of 20 DEG C for 3-5 hours; S2, flatly laying 10-20 cm thick wet soil with neutral PH value on a seedling raising pot or a seedling raising frame, then pressing the seeds into the wet soil, wherein the seed cultivation interval is 10-30 cm, and then flatly laying sandy loam on the wet soil, wherein the thickness of the sandy loam is 2-4 cm; S3, setting the temperature of theenvironment where the seedling raising pot or the seedling raising frame is located to be 15-25 DEG C until radicles of the seeds protrude and germinate; and S4, after the radicles of the seeds protrude and germinate, setting the environment temperature during seed cultivation to be 15-25 DEG C, and watering the seeds every eight hours. According to the method, by providing proper temperature, proper watering, proper ferti |
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