Semiconductor light receiving element and method for manufacturing semiconductor light receiving element
A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving por...
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| creator | TANIGUCHI TAKAFUMI WASHINO RYU HAMADA HIROSHI |
| description | A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductorlayer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.
一种半导体光接收元件包括基板；光接收台面部分，形成在基板的顶部上，包括第一导电类型的第一半导体层、吸收层和第二导电类型的第二半导体层；光接收部分电极，形成在光接收台面部分上方，连接到第一半导体层；衬垫电极，其形成在基板的顶部上；以及桥接电极，其被放置成使得绝缘间隙介于桥接电极和第二半导体层之间，被构造为将光接收部分电极和在基板的顶部上的衬垫电极连接，该桥接电极形成在与衬垫电极和光接收部分电极 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN111916507A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN111916507A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN111916507A3</originalsourceid><addsrcrecordid>eNrjZMgITs3NTM7PSylNLskvUsjJTM8oUShKTU7NLMvMS1dIzUnNTc0rUUjMS1HITS3JyE9RSAMqy03MK01LTC4pLQIpKibGCB4G1rTEnOJUXijNzaDo5hri7KGbWpAfn1pckJicmpdaEu_sZ2hoaGloZmpg7mhMjBoAnklBdg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor light receiving element and method for manufacturing semiconductor light receiving element</title><source>esp@cenet</source><creator>TANIGUCHI TAKAFUMI ; WASHINO RYU ; HAMADA HIROSHI</creator><creatorcontrib>TANIGUCHI TAKAFUMI ; WASHINO RYU ; HAMADA HIROSHI</creatorcontrib><description>A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductorlayer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.
一种半导体光接收元件包括基板；光接收台面部分，形成在基板的顶部上，包括第一导电类型的第一半导体层、吸收层和第二导电类型的第二半导体层；光接收部分电极，形成在光接收台面部分上方，连接到第一半导体层；衬垫电极，其形成在基板的顶部上；以及桥接电极，其被放置成使得绝缘间隙介于桥接电极和第二半导体层之间，被构造为将光接收部分电极和在基板的顶部上的衬垫电极连接，该桥接电极形成在与衬垫电极和光接收部分电极</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201110&DB=EPODOC&CC=CN&NR=111916507A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201110&DB=EPODOC&CC=CN&NR=111916507A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANIGUCHI TAKAFUMI</creatorcontrib><creatorcontrib>WASHINO RYU</creatorcontrib><creatorcontrib>HAMADA HIROSHI</creatorcontrib><title>Semiconductor light receiving element and method for manufacturing semiconductor light receiving element</title><description>A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductorlayer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.
一种半导体光接收元件包括基板；光接收台面部分，形成在基板的顶部上，包括第一导电类型的第一半导体层、吸收层和第二导电类型的第二半导体层；光接收部分电极，形成在光接收台面部分上方，连接到第一半导体层；衬垫电极，其形成在基板的顶部上；以及桥接电极，其被放置成使得绝缘间隙介于桥接电极和第二半导体层之间，被构造为将光接收部分电极和在基板的顶部上的衬垫电极连接，该桥接电极形成在与衬垫电极和光接收部分电极</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMgITs3NTM7PSylNLskvUsjJTM8oUShKTU7NLMvMS1dIzUnNTc0rUUjMS1HITS3JyE9RSAMqy03MK01LTC4pLQIpKibGCB4G1rTEnOJUXijNzaDo5hri7KGbWpAfn1pckJicmpdaEu_sZ2hoaGloZmpg7mhMjBoAnklBdg</recordid><startdate>20201110</startdate><enddate>20201110</enddate><creator>TANIGUCHI TAKAFUMI</creator><creator>WASHINO RYU</creator><creator>HAMADA HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>20201110</creationdate><title>Semiconductor light receiving element and method for manufacturing semiconductor light receiving element</title><author>TANIGUCHI TAKAFUMI ; WASHINO RYU ; HAMADA HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111916507A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TANIGUCHI TAKAFUMI</creatorcontrib><creatorcontrib>WASHINO RYU</creatorcontrib><creatorcontrib>HAMADA HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANIGUCHI TAKAFUMI</au><au>WASHINO RYU</au><au>HAMADA HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor light receiving element and method for manufacturing semiconductor light receiving element</title><date>2020-11-10</date><risdate>2020</risdate><abstract>A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductorlayer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.
一种半导体光接收元件包括基板；光接收台面部分，形成在基板的顶部上，包括第一导电类型的第一半导体层、吸收层和第二导电类型的第二半导体层；光接收部分电极，形成在光接收台面部分上方，连接到第一半导体层；衬垫电极，其形成在基板的顶部上；以及桥接电极，其被放置成使得绝缘间隙介于桥接电极和第二半导体层之间，被构造为将光接收部分电极和在基板的顶部上的衬垫电极连接，该桥接电极形成在与衬垫电极和光接收部分电极</abstract><oa>free_for_read</oa></addata></record> |
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| title | Semiconductor light receiving element and method for manufacturing semiconductor light receiving element |
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