Semiconductor light receiving element and method for manufacturing semiconductor light receiving element

A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductorlayer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode. 一种半导体光接收元件包括基板；光接收台面部分，形成在基板的顶部上，包括第一导电类型的第一半导体层、吸收层和第二导电类型的第二半导体层；光接收部分电极，形成在光接收台面部分上方，连接到第一半导体层；衬垫电极，其形成在基板的顶部上；以及桥接电极，其被放置成使得绝缘间隙介于桥接电极和第二半导体层之间，被构造为将光接收部分电极和在基板的顶部上的衬垫电极连接，该桥接电极形成在与衬垫电极和光接收部分电极