Image sensor and forming method thereof

Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is overthe semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such thata bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact. 本发明的各种实施例涉及一种包括光管结构的图像传感器。光侦测器设置在半导体衬底内。栅极电极位于半导体衬底之上且与光侦测器相邻。层级间介电层上覆于半导体衬底。导电接点设置在层级间介电层内，以使得导电接点的底表面低于栅极电极的顶表面。光管结构上覆于光侦测器，以使得光管结构的底表面凹入成低于导电接点的顶表面。