Sidewall Passivation for HEMT Devices

Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a semiconductor substrate. The heterojunction structure includes a binary III/V semiconductor layer made of a first III-nitride material to act as a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	QIU HANQIN, CHEN QIMING, CAI ZHENGYUAN, YAO FUWEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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