Manufacturing method of super junction device

The invention discloses a manufacturing method of a super junction device, and relates to the field of semiconductor manufacturing. The manufacturing method of the super junction device comprises thefollowing steps: forming a groove in a first type epitaxial layer; injecting nitrogen ions into the first type epitaxial layer below the trench; filling the trench with a second type epitaxial layer,wherein the first type is opposite to the second type. According to the invention, the problem that boron in a P-type column diffuses to an N-type thin layer due to the thermal process after a super junction structure is formed, and the conduction resistance of a device is increased is solved. Therefore, the effects of reducing the influence of the thermal process on the on-resistance of the superjunction device and improving the performance of the small-size super junction device are achieved. 本申请公开了一种超级结器件的制作方法，涉及半导体制造领域。该超级结器件的制作方法包括在第一类型外延层中形成沟槽；向所述沟槽下方的第一类型外延层注入氮离子；利用第二类型外延层填充所述沟槽，第一类型与第二类型相反；解决了超级结结构形成之后的热过程导致P型柱