SUPERCONDUCTING MEMORY SYSTEM WITH STACKED DRIVERS AND DIFFERENTIAL TRANSFORMERS

A memory system including an array of memory cells may include a set of word-lines, and a set of return word-lines coupled to the memory cells in the array of memory cells. The memory system may further include a set of bit-lines coupled to the memory cells. Each of the memory cells may include a memory storage element including a readout superconducting quantum interference device (SQUID), and amagnetic Josephson Junction (MJJ), and where the memory storage element may further include a differential transformer coupled in series with the MJJ such that in response to a bit-line current applied to at least one of the set of the bit-lines and a word-line current applied to at least one of the set of word-lines, the differential transformer is configured to induce a flux in the at least onereadout SQUID. 一种包括存储器单元阵列的存储器系统可以包括字线的集合和耦合到存储器单元阵列中的存储器单元的返回字线的集合。存储器系统还可以包括耦合到存储器单元的位线的集合。每个存储器单元可以包括存储器存储元件，存储器存储元件包括读出超导量子干涉器件(SQUID)和磁性约瑟夫森结(MJJ)，并且其中存储器存储元件还可以包括差分变压器，差分变压器与MJJ串联耦合，使得响应于施加到该位线的集合中的至少一个位线的位线电流和施加到该字线的集合中