FinFET device

A finFET device that includes a substrate and at least one semiconductor fin extending from the substrate. The fin may include a plurality of wide portions comprising a first semiconductor material and one or more narrow portions. The one or more narrow portions have a second width less than the first width of the wide portions. Each of the one or more narrow portions separates two of the plurality of wide portions from one another such that the plurality of wide portions and the one or more narrow portions are arranged alternatingly in a substantially vertical direction that is substantiallyperpendicular with a surface of the substrate. The fin may also include a channel layer covering sidewalls of the plurality of wide portions and a sidewall of the one or more narrow portions. 鳍状场效晶体管装置包括基板与自基板延伸的至少一半导体鳍状物。半导体鳍状物可包括含有第一半导体材料的多个宽部，以及一或多个窄部。一或多个窄部的第二宽度小于宽度的第一宽度。一或多个窄部的每一者使多个宽部的两者彼此分开，使多个宽部与一或多个窄部交替配置于实质上垂质的方向中，且实质上垂质的方向实质上垂直于基板的表面。鳍状物亦包括通道层覆盖多个宽部的侧壁以及一或多个窄部的侧壁。