Layout pattern and forming method of eight-transistor static random access memory

The invention discloses a layout pattern and a forming method of an eight-transistor static random access memory (8T-SRAM). The layout pattern comprises a first diffusion region, a second diffusion region and a third diffusion region which are positioned on a substrate, wherein a limit spacing regio...

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Bibliographische Detailangaben

Hauptverfasser:	GUO YOUCE, LYU TIANYU, CHEN CHANGHONG, HUANG JUNXIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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