Layout pattern and forming method of eight-transistor static random access memory

The invention discloses a layout pattern and a forming method of an eight-transistor static random access memory (8T-SRAM). The layout pattern comprises a first diffusion region, a second diffusion region and a third diffusion region which are positioned on a substrate, wherein a limit spacing region is arranged between the third diffusion region and the first diffusion region; the limit spacing region is in direct contact with the first diffusion region and the third diffusion region; and a first additional diffusion region, a second additional diffusion region and a third additional diffusion region are respectively arranged along the peripheries of the first diffusion region, the second diffusion region and the third diffusion region and are respectively and directly contacted with thefirst diffusion region, the second diffusion region and the third diffusion region, and the additional diffusion regions are not positioned in the range of the limit spacing region. 本发明公开一种八晶体管静态随机存取存储器(8T-SRAM)的布局图案与形成方法，其布局