SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts. 一种半导体元件，包含基板、通道层、绝缘层、源极/漏极触点、栅极介电层，及栅电极。通道层位于基板上方且包含二维(two dimensional；2D)材料。绝缘层在通道层上。源极/漏极触点位于通道层上方。栅极介电层位于绝缘层及通道层上方。栅电极位于栅极介电层上方且在源极/漏极触点之间。