Substrate processing method and substrate processing apparatus

The invention relates to a substrate processing method and a substrate processing apparatus. A base film of mask is contracted without blocking an opening part of a mask. The invention provides the substrate processing method which comprises the following steps: a substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to -30 DEG C. or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture. 本发明涉及基板处理方法和基板处理装置。[课题]在不使掩模的开口部阻塞的情况下使掩模的基底膜收缩。[解决方案]提供一种基板处理方法，其包括如下工序：准备基板的工序，所述基板具有为含硅膜的第1膜、和形成于前述第1膜上、且具有第2开口部的第2膜；控制工序，将基板的温度控制为-30°以下；