Method and device for improving etching uniformity of wafer

The invention discloses a method for improving the etching uniformity of a wafer, and relates to the related technical field of semiconductors, and the method comprises the following steps that the wafer is fixed by a wafer fixing device, and at least the etching surface of the wafer is exposed; and the wafer is rotated around a preset axis so that the amount of etching gas in contact with each region of the etched surface of the wafer within a predetermined period of time is the same or substantially the same. The wafer fixing device can expose the etching surface of the wafer, the shielded area of the etching surface of the wafer is reduced, and etching gas can easily reach the etching surface of the wafer and etch the etching surface of the wafer; the wafer rotates around the preset axis, the wafer uniformly reaches an area with a higher etching rate and an area with a lower etching rate, the amount of the etching gas contacted in each rotation period is the same or basically the same, and the etching surf