Chemical mechanical grinding method

The invention provides a chemical mechanical grinding method. The method comprises the steps that a to-be- ground wafer is subjected to primary grinding through a wool felt grinding pad so as to eliminate a high segment difference of the to-be-ground wafer; and secondary grinding is carried out on the wafer obtained after primary grinding through a polyurethane grinding pad to complete planarization of the wafer. The chemical mechanical grinding method can maintain the uniformity of the surface of the semiconductor wafer under a large grinding amount. 本发明提供一种化学机械研磨方法，包括：将待研磨晶圆用羊毛毡研磨垫进行第一次研磨，以消除所述待研磨晶圆的高段差；将第一次研磨完毕的晶圆采用聚氨酯研磨垫进行第二次研磨，以完成所述晶圆的平坦化。本发明提供的化学机械研磨方法能够在较大的研磨量下保持半导体晶圆表面的均匀性。