Semiconductor power device

The invention provides a semiconductor power device. The semiconductor power device comprises a substrate, an epitaxial layer, a well region, a grid electrode and a JFET region. The well region comprises a plurality of first well regions, the plurality of first well regions being distributed at intervals, and the orthographic projection of each first well region on the substrate being circular; asecond well region, wherein a gap is formed between each first well region and the corresponding second well region, each gap forms one JFET region, the orthographic projection of each JFET region onthe substrate is in a circular ring shape, and the ring widths of the circular rings are equal. The structure of the semiconductor power device does not have a breakdown weak point, can bear high electric field intensity, and is long in service life and good in reliability. 本发明提供了半导体功率器件。该半导体功率器件包括衬底、外延层、阱区、栅极和JFET区，所述阱区包括：多个第一阱区，多个所述第一阱区间隔分布，且每个所述第一阱区在所述衬底上的正投影为圆形；第二阱区，每个所述第一阱区与所述第二阱区之间具有间隙，每个所述间隙构成一个所述JFET区，每个所述JFET区在所述衬