SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

A semiconductor device includes a substrate (10), a channel layer (12) disposed on the substrate (10), and a barrier layer (14) disposed on the channel layer (12). The semiconductor device further includes a dielectric layer (16) disposed on the barrier layer (14) and defining a first recess exposing a portion of the barrier layer (14). The semiconductor device further includes a first spacer (18a) disposed within the first recess, wherein the first spacer (18a) comprises a surface (14i) laterally connecting the dielectric layer (16) to the barrier layer (14). 一种半导体装置包含衬底(10)、安置于所述衬底(10)上的沟道层(12)，以及安置于所述沟道层(12)上的势垒层(14)。所述半导体装置另外包含安置于所述势垒层(14)上并且界定暴露所述势垒层(14)的一部分的第一凹部的介电层(16)。所述半导体装置另外包含安置于所述第一凹部内的第一间隔件(18a)，其中所述第一间隔件(18a)包括使所述介电层(16)横向连接到所述势垒层(14)的表面(14i)。