SEMICONDUCTOR DEVICE
According to one embodiment of the present invention, a semiconductor device (100) is provided with a wiring substrate (1); a controller chip (2) provided on the wiring substrate (1) and sealed by a first resin composition (3); a nonvolatile memory chip (4) that is provided on the first resin compos...
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| creator | AOKI HIDEO TSUKIYAMA SATOSHI |
| description | According to one embodiment of the present invention, a semiconductor device (100) is provided with a wiring substrate (1); a controller chip (2) provided on the wiring substrate (1) and sealed by a first resin composition (3); a nonvolatile memory chip (4) that is provided on the first resin composition (3) and is sealed by a second resin composition (5); a second bonding wire (9) that connects apower supply wiring pad (10) of the controller chip (2) to the wiring substrate (1) and is sealed by the first resin composition (3); and a first bonding wire (6) that connects the signal wiring pad(7) of the controller chip (2) to the wiring substrate (1), is sealed by the first resin composition (3), and has a higher Pd content than the second bonding wire (9).
根据本发明的一实施方式，实施方式的半导体装置(100)具有：配线基板(1)；控制器芯片(2)，设置在配线基板(1)上，由第1树脂组合物(3)密封；非易失性存储器芯片(4)，设置在第1树脂组合物(3)上，由第2树脂组合物(5)密封；第2接合线(9)，将控制器芯片(2)的电源配线用垫(10)与配线基板(1)连接，由第1树脂组合物(3)密封；及第1接合线(6)，将控制器芯片(2)的信号配线用垫(7)与配线基板(1)连接，由第1树脂组合物(3)密封，且Pd含有率比第2接合线(9)高。 |
| format | Patent |
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根据本发明的一实施方式，实施方式的半导体装置(100)具有：配线基板(1)；控制器芯片(2)，设置在配线基板(1)上，由第1树脂组合物(3)密封；非易失性存储器芯片(4)，设置在第1树脂组合物(3)上，由第2树脂组合物(5)密封；第2接合线(9)，将控制器芯片(2)的电源配线用垫(10)与配线基板(1)连接，由第1树脂组合物(3)密封；及第1接合线(6)，将控制器芯片(2)的信号配线用垫(7)与配线基板(1)连接，由第1树脂组合物(3)密封，且Pd含有率比第2接合线(9)高。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200929&DB=EPODOC&CC=CN&NR=111725199A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200929&DB=EPODOC&CC=CN&NR=111725199A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AOKI HIDEO</creatorcontrib><creatorcontrib>TSUKIYAMA SATOSHI</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>According to one embodiment of the present invention, a semiconductor device (100) is provided with a wiring substrate (1); a controller chip (2) provided on the wiring substrate (1) and sealed by a first resin composition (3); a nonvolatile memory chip (4) that is provided on the first resin composition (3) and is sealed by a second resin composition (5); a second bonding wire (9) that connects apower supply wiring pad (10) of the controller chip (2) to the wiring substrate (1) and is sealed by the first resin composition (3); and a first bonding wire (6) that connects the signal wiring pad(7) of the controller chip (2) to the wiring substrate (1), is sealed by the first resin composition (3), and has a higher Pd content than the second bonding wire (9).
根据本发明的一实施方式，实施方式的半导体装置(100)具有：配线基板(1)；控制器芯片(2)，设置在配线基板(1)上，由第1树脂组合物(3)密封；非易失性存储器芯片(4)，设置在第1树脂组合物(3)上，由第2树脂组合物(5)密封；第2接合线(9)，将控制器芯片(2)的电源配线用垫(10)与配线基板(1)连接，由第1树脂组合物(3)密封；及第1接合线(6)，将控制器芯片(2)的信号配线用垫(7)与配线基板(1)连接，由第1树脂组合物(3)密封，且Pd含有率比第2接合线(9)高。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGhuZGpoaWlo7GxKgBAIFgHrI</recordid><startdate>20200929</startdate><enddate>20200929</enddate><creator>AOKI HIDEO</creator><creator>TSUKIYAMA SATOSHI</creator><scope>EVB</scope></search><sort><creationdate>20200929</creationdate><title>SEMICONDUCTOR DEVICE</title><author>AOKI HIDEO ; TSUKIYAMA SATOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111725199A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>AOKI HIDEO</creatorcontrib><creatorcontrib>TSUKIYAMA SATOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AOKI HIDEO</au><au>TSUKIYAMA SATOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2020-09-29</date><risdate>2020</risdate><abstract>According to one embodiment of the present invention, a semiconductor device (100) is provided with a wiring substrate (1); a controller chip (2) provided on the wiring substrate (1) and sealed by a first resin composition (3); a nonvolatile memory chip (4) that is provided on the first resin composition (3) and is sealed by a second resin composition (5); a second bonding wire (9) that connects apower supply wiring pad (10) of the controller chip (2) to the wiring substrate (1) and is sealed by the first resin composition (3); and a first bonding wire (6) that connects the signal wiring pad(7) of the controller chip (2) to the wiring substrate (1), is sealed by the first resin composition (3), and has a higher Pd content than the second bonding wire (9).
根据本发明的一实施方式，实施方式的半导体装置(100)具有：配线基板(1)；控制器芯片(2)，设置在配线基板(1)上，由第1树脂组合物(3)密封；非易失性存储器芯片(4)，设置在第1树脂组合物(3)上，由第2树脂组合物(5)密封；第2接合线(9)，将控制器芯片(2)的电源配线用垫(10)与配线基板(1)连接，由第1树脂组合物(3)密封；及第1接合线(6)，将控制器芯片(2)的信号配线用垫(7)与配线基板(1)连接，由第1树脂组合物(3)密封，且Pd含有率比第2接合线(9)高。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
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