SEMICONDUCTOR DEVICE

According to one embodiment of the present invention, a semiconductor device (100) is provided with a wiring substrate (1); a controller chip (2) provided on the wiring substrate (1) and sealed by a first resin composition (3); a nonvolatile memory chip (4) that is provided on the first resin compos...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AOKI HIDEO, TSUKIYAMA SATOSHI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:According to one embodiment of the present invention, a semiconductor device (100) is provided with a wiring substrate (1); a controller chip (2) provided on the wiring substrate (1) and sealed by a first resin composition (3); a nonvolatile memory chip (4) that is provided on the first resin composition (3) and is sealed by a second resin composition (5); a second bonding wire (9) that connects apower supply wiring pad (10) of the controller chip (2) to the wiring substrate (1) and is sealed by the first resin composition (3); and a first bonding wire (6) that connects the signal wiring pad(7) of the controller chip (2) to the wiring substrate (1), is sealed by the first resin composition (3), and has a higher Pd content than the second bonding wire (9). 根据本发明的一实施方式,实施方式的半导体装置(100)具有:配线基板(1);控制器芯片(2),设置在配线基板(1)上,由第1树脂组合物(3)密封;非易失性存储器芯片(4),设置在第1树脂组合物(3)上,由第2树脂组合物(5)密封;第2接合线(9),将控制器芯片(2)的电源配线用垫(10)与配线基板(1)连接,由第1树脂组合物(3)密封;及第1接合线(6),将控制器芯片(2)的信号配线用垫(7)与配线基板(1)连接,由第1树脂组合物(3)密封,且Pd含有率比第2接合线(9)高。