Semiconductor device and control method thereof

Embodiments provide a semiconductor device capable of reducing electromagnetic interference noise and switching loss and a control method thereof. According to one embodiment, the semiconductor deviceincludes a semiconductor portion, an electrode provided on a front surface of the semiconductor port...

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Bibliographische Detailangaben
Hauptverfasser: YAMASHITA HIROAKI, ICHIJO HISAO, KOUMOTO TAKAFUMI, ONO SYOTARO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Embodiments provide a semiconductor device capable of reducing electromagnetic interference noise and switching loss and a control method thereof. According to one embodiment, the semiconductor deviceincludes a semiconductor portion, an electrode provided on a front surface of the semiconductor portion, and a plurality of trench-type control electrodes provided between the semiconductor portion and the electrode. The semiconductor portion includes a first layer of a first conductivity type, a second layer of a second conductivity type, a third layer of the second conductivity type, a fourth layer of the first conductivity type, a fifth layer of the second conductivity type, and a sixth layer of the first conductivity type. The third layer is provided between the first layer and the electrode. The fourth and fifth layers are each selectively provided between the third layer and the electrode. The fourth layer faces a first control electrode among the control electrodes via the insulating film, and the fifth la