Semiconductor light emitting device and Manufacturing method of the same

Provided are a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer covering a portion of the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor layer covering a portion of the active layer, wherein sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction. 提供了一种半导体发光器件及其制造方法。所述半导体发光器件包括：第一导电型半导体层；有源层，其覆盖第一导电型半导体层的一部分；以及第二导电型半导体层，其覆盖有源层的一部分，第二导电型半导体层的侧壁沿水平方向与有源层的侧壁间隔开。