Preparation method of patterned sapphire substrate

The invention discloses a preparation method of a patterned sapphire substrate, and an AlN film belongs to a III-V group compound insulating material. The method has many excellent physical and chemical properties, such as high hardness, good III thermal conductivity, low thermal expansion coefficient and excellent chemical stability. The lattice constants of AlN and GaN are close to each other, and the AlN layer is grown on the sapphire, so that the strain between the sapphire and GaN caused by large lattice mismatch II can be reduced. According to the method, an optical surface on the surface of the sapphire is reserved, the problems of epitaxial atomization and dislocation caused by the fact that the size of the PSS is increased can also be solved, and on the other hand, growth of epitaxial GaN is facilitated, and the epitaxial growth time is shortened. 本发明公开了一种图形化蓝宝石衬底的制备方法，AlN薄膜属于III-V族化合物绝缘材料，具有很多优越的物理化学性质，如高硬度、很好的III导热性、低热膨胀系数、优良的化学稳定性。AlN和GaN的晶格常数比较接近，在蓝宝石上生长AlN层，可以减少蓝宝石和GaN之间因较大的晶格失配二导致的应变。本发明既保留了蓝宝石