STORAGE DEVICE

The embodiment of the invention provides a storage device which can inhibit a semi-selection leaked current. The storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon(Si) and germanium (Ge), tellurium (Te), and aluminum (Al). 本发明的实施方式提供一种能够抑制半选择漏电流的存储装置。实施方式的存储装置具备：第1导电层；第2导电层；阻变元件，设置在第1导电层与第2导电层之间；及中间层，设置在阻变元件与第1导电层之间、及阻变元件与第2导电层之间中任一处，且包含硅(Si)及锗(Ge)中至少任一元素、碲(Te)及铝(Al)。