Preparation method and application of gallium oxide film

The invention discloses a preparation method and application of a gallium oxide film. The preparation method of the gallium oxide film comprises the following steps: 1) preparing a gallium nitride film on a substrate by adopting a halide vapor phase epitaxy method; 2) in an oxygen-containing atmosphere, oxidizing the gallium nitride film to form a gallium oxide/gallium nitride composite film; 3) performing in-situ thick film growth of gallium oxide on the gallium oxide/gallium nitride composite film by adopting a halide vapor phase epitaxy method to form a gallium oxide film; and 4) strippingthe gallium oxide film from the substrate to obtain the gallium oxide film. The gallium oxide film can be used as a self-supporting gallium oxide substrate. The preparation method provided by the invention can effectively reduce the stress in the halide vapor phase epitaxy growth gallium oxide thick film material and reduce the dislocation density, so that the high-quality self-supporting galliumoxide thick film is obtain