METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP

The invention provides a method for manufacturing a semiconductor chip with a first protective film. The method comprises the steps: attaching a thermosetting resin film to a bump-side first surface of a semiconductor wafer having bumps; forming the first protective film on the first surface of the semiconductor wafer by thermally curing the thermosetting resin film; half cut dicing the semiconductor wafer from the side of the first surface on which the first protective film is formed; and removing a residue of the first protective film at the tops of the bumps and dividing the semiconductor wafer into pieces by irradiating the half cut diced first surface side of the semiconductor wafer with plasma. 本发明提供一种带第一保护膜的半导体芯片的制造方法，该制造方法包含：将热固性树脂膜贴附在具有凸块的半导体晶圆的该凸块侧的第一面上；通过使该热固性树脂膜进行热固化，在该半导体晶圆的该第一面上形成第一保护膜；从形成有所述第一保护膜的第一面的一侧对该半导体晶圆进行半切切割；及通过对该半导体晶圆的经过半切切割的该第一面的一侧进行等离子体照射，去除该凸块的头顶部的该第一保护膜的残渣，并同时将该半导体晶圆单颗化。