Preparation method of Si-based InGaAs photoelectric detector and photoelectric detector

The invention discloses a preparation method of a Si-based InGaAs photoelectric detector. The preparation method comprises the following steps: acquiring a III-V group compound semiconductor substrate; growing a corresponding sacrificial layer with the thickness of 200 nanometers to 400 nanometers on the III-V group compound semiconductor substrate; growing a strain InxGa (1-x) As layer with the thickness of 30 nanometers to 2000 nanometers on the sacrificial layer; injecting H or He ions into the sacrificial layer; bonding the InxGa (1-x) As layer and an N+ doped Si wafer by adopting an ion beam stripping method and carrying out annealing stripping treatment to form a Si/InxGa (1-x) As/damage layer structure; and removing the damage layer, and carrying out elastic relaxation on the InxGa(1-x) As layer to obtain InxGa(1-x) AsOI. According to the invention, a layer of InxGa (1-x) As with a lattice constant different from that of a conventional III-V compound semiconductor substrate isbonded on silicon, and the