Enhanced nitride power device and manufacturing method

The invention discloses an enhanced nitride power device. The device comprises a substrate, a buffer layer, a barrier layer, a first nitride layer, a P-type nitride gate, a source metal, a drain metaland a gate metal. The source metal, the drain metal and the first nitride layer are arranged on the barrier layer. The P-type nitride gate is arranged on the first nitride layer, and the gate metal is arranged on the P-type nitride gate. And the material of the first nitride layer is at least one of ScxAl(1-x)N, BxAl(1-x)N, ScxByAl(1-x-y)N and ScxGa(1-x)N. The invention also discloses a manufacturing method thereof. The etching rate is changed by utilizing the volatility difference of the product of the reaction of the first nitride layer material and the P-type nitride material with the etching gas during dry etching, the P-type nitride etching selection ratio is improved, the damage to the barrier layer interface during P-type nitride etching is avoided, the leakage current of the device is improved, and the pr