Preparation method of high-transparency high-conductivity ultra-thin hydrogen doped indium oxide thin film

The invention discloses a preparation method of a high-transparency high-conductivity ultra-thin hydrogen doped indium oxide thin film. Radio frequency magnetron sputtering is adopted, He and N2 serveas sputtering gas, H2 is introduced into the sputtering process as a doping source, and an IOH thin film with the thickness of 10 nanometers to 100 nanometers can be obtained by regulating the sputtering power density, the substrate temperature, the deposition air pressure and the H2 doping amount. The method comprises the following steps: 1, sequentially putting a glass substrate into an ExtranMA02 neutral cleaning solution, deionized water and isopropanol for 5 minutes, sequentially putting the glass substrate into the Extran MA02 neutral cleaning solution, the deionized water and the isopropanol again, and cleaning with ultrasonic waves for 5 minutes; and 2, the air-dried glass substrate is placed into a radio frequency magnetron sputtering device for vacuumizing, wherein the vacuum degree is between 1.0 to 5.