RF filter provided with SiO2 passivation layer

The invention relates to the technical field of surface acoustic waves, in particular to an RF filter provided with a SiO2 passivation layer, the passivation layer of the RF filter is SiO2 of 25-80 nm, frequency modulation is carried out on the RF filter coated with SiO2, and specifically, the RF fi...

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Bibliographische Detailangaben
Hauptverfasser: ZHAO XUEMEI, SHA XIAOQIANG, MI JIA, TAN FAZENG, WU PING
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to the technical field of surface acoustic waves, in particular to an RF filter provided with a SiO2 passivation layer, the passivation layer of the RF filter is SiO2 of 25-80 nm, frequency modulation is carried out on the RF filter coated with SiO2, and specifically, the RF filter of 1.5 GHZ is coated with SiO2 of 40 nm; under the condition that the finger strip structure isnot changed and the resistance loss is not increased, the wave guide is improved, the reflection is increased, the bandwidth of passband insertion loss is increased, and the uniformity is improved atthe same time. 本发明涉及声表面波技术领域,特别涉及一种设置有SiO钝化层的RF滤波器,RF滤波器的钝化层为25-80nm的SiO,对涂覆SiO的RF滤波器进行调频,具体的,1.5GHZ的RF滤波器涂覆40nm的SiO;本发明在没有改变指条结构、且不增加电阻损耗的情况下,提高了波的导向、增加了反射,并且在增加在通带插损的带宽、同时提高均匀性。