Semiconductor device and manufacturing method thereof

The present invention provides a semiconductor device including a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposedbelow the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be acold implantation process. A contact silicide having a non-angular profile is also provided. 本发明提供了一种半导体器件，该半导体器件包括具有源极/漏极区的晶体管。导电接触件设置在源极/漏极区上方。硅化物元件设置在导电接触件下方。硅化物元件具有无角的截面轮廓。在一些实施例中，硅化物元件可具有近似弧形的截面轮廓，例如，类椭圆形的轮廓。通过注入工艺在源极/漏极区中形成非晶硅区来至少部分地形成硅化物元件。注入工艺可以是冷注入工艺。本发明还提供了具有无角轮廓的接触件硅化物。